The report presents valuable insights into the growth trends of the global power discrete market for the 2017-2025 period. This includes a scrutiny into vital market indicators such as market drivers, market challenges, and trends in the historic years and their behavior analyzed for the future years.
Albany, NY -- (SBWIRE) -- 04/17/2017 -- Global Power Discrete Market: Overview
The increasing demand for insulated-gate bipolar transistor (IGBT) is contributing significantly to the growth of the power discrete market. Power discrete devices are a type of semiconductor devices that are utilized as a switch in power electronics. For instance, a switch-mode power supply is an example of power discrete device.
The report presents valuable insights into the growth trends of the global power discrete market for the 2017-2025 period. This includes a scrutiny into vital market indicators such as market drivers, market challenges, and trends in the historic years and their behavior analyzed for the future years.
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The report is presented collecting data from industry-centric databases and using validated analytical tools for scrutiny of the information. Last but not the least, the report is an all-important tool for comprehending trends, opportunities, and competitive hierarchy of the global power discrete market for the 2017-2025 period.
Global Power Discrete Market: Material Requirements
Power discrete devices utilize next-generation materials such as SiC and GaN. This is because these materials offer speed switching, low energy loss, and great heat resistance. Power semiconductors use silicon carbide (SiC) for expansion, which includes SiC, SiC BJTs, SiC JFETs diodes, MOSFETs, and SiC Schottky. The band gap material that provides comparable benefits as SiC has better cost-reduction potential. In addition, gallium nitride (GaN) can be used by existing silicon substrates. The use of GaN helps reduce cost and facilitates mass production. The approval of SiC and GaN power semiconductors are anticipated to increase, mainly in the industrial motor drive and electric vehicle/hybrid electric vehicle segments.
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Global Power Discrete Market: Drivers and Restraints
The incessantly increasing demand for Insulated Gate Bipolar Transistors (IGBTs) is one of the major factors driving the global power discrete market. The use of discrete silicon-based IGBTs increases the efficacy of electronic devices that range from consumer electronics to power electronics. As a matter of fact, the use of silicon-based IGBTs contributes significantly to the advancement of power electronics.
However, the growth of the power discrete market is challenged due to several factors. Some of these are slow economic upturn in the US, Eurozone debt crisis, and natural calamities in Japan among others.
Global Power Discrete Market: Market Segmentation
The global power discrete market is segmented on the basis of type and application. By type, Insulated Gate Bipolar Transistor (IGBT), Gallium Nitride (GaN), power rectifiers, Metal Oxide Semiconductor Field Effect Transistor (MOSFET), Silicon Carbide (SiC), and thyristors are the components of this market. On the basis of application, the power discrete market is divided into automotive, consumer, medical, cellular handsets and infrastructure, and lighting among others.
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Companies Mentioned in the Report
The report presents the competitive scenario of the global power discrete market profiling key companies in the market, namely Infineon Technologies AG, Mitsubishi Electric Corp., ST Microelectronics N.V., International Rectifier, Vishay Intertechnology Inc., Siward Crystal Technology, Vectron International, Fairchild Semiconductor International Inc., Toshiba Corp., Fuji Electric Co Ltd, Renesas Electronics Corp, ON Semiconductor Corp, and Tongfang Guoxin Electronics among others.
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